| PART |
Description |
Maker |
| TIED69 |
avalanche Photodiode
|
http://
List of Unclassifed Manufacturers
ETC
N.A.
|
| SSO-AD-230-TO52 |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-1100-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SD012-70-62-541 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| C30737P-500 C30737 C30737E-230 C30737E-500 C30737P |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SD630-70-72-500 |
Non-Cooled Large Area Red Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| SD630-70-74-500 |
Non-Cooled Large Area Blue Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
